(China (Mainland))
Product Summary
The M36L0R7050T1ZAQ is a 128 Mbit Flash Memory. The M36L0R7050T1ZAQ is offered in a Stacked TFBGA88(8x10mm, 8x10 ball array, 0.8mm pitch) package. In addition to the standard version, the packages are also available in Lead-free version, in compliance with JEDEC Std J-STD-020B, the ST ECOPACK 7191395 Specification, and the RoHS(Restriction of Hazardous Substances) directive.
Parametrics
M36L0R7050T1ZAQ absolute maximum ratings: (1)Ambient Operating Temperature: –25 to 85 ℃; (2)Temperature Under Bias: –25 to 85 ℃; (3)TSTG Storage Temperature: –55 to 125 ℃; (4)Input or Output Voltage: –0.5 to 3.6 V; (5)Core and Input/Output Supply Voltages: –0.2 to 2.5 V; (6)Flash Program Voltage: –0.2 to 14 V; (7)Output Short Circuit Current: 100 mA; (8)Time for VPPF at VPPFH: 100 hours.
Features
M36L0R7050T1ZAQ features: (1)1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory; (2)1 die of 32 Mbit (2Mb x16) Asynchronous Pseudo SRAM; (3)Compliant with Lead-Free Soldering Processes; (4)Lead-Free Versions; (5)Multiple Bank Memory Array: 8 Mbit Banks; (6)Parameter Blocks (Top or Bottom location); (7)program/erase in one Bank while read in others; (8)No delay between read and write operations; (9)64 bit unique device number; (10)2112 bit user programmable OTP Cells.
Diagrams
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 M36L0R7040B0 |
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Negotiable |
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M36L0R7040T0 |
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Negotiable |
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M36L0R7050B0 |
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Negotiable |
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M36L0R7050L1 |
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Negotiable |
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M36L0R7050T0 |
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Negotiable |
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M36L0R7050U1 |
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Negotiable |
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